SiC Technologies II

Tuesday, 3 October 2017: 10:00-11:50
Chesapeake B (Gaylord National Resort and Convention Center)
Hrishikesh Das
(Invited) Material Challenges in Low Offcut Substrates for High Power  SiC Devices
R. L. Myers-Ward (U.S. Naval Research Laboratory, Washington DC), C. Martin (II-VI Incorporated), N. A. Mahadik, R. Stahlbush (US Naval Research Laboratory), P. Klein, K. Daniels, A. K. Boyd (U.S. Naval Research Laboratory, Washington DC), C. R. Eddy Jr. (U.S. Naval Research Laboratory), and D. K. Gaskill (US Naval Research Laboratory)
(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes (Cancelled)
Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC
R. Nipoti (CNR-IMM, Bologna, Italy), M. Puzzanghera (DIA - Università di Parma), M. Canino (CNR-IMM of Bologna), and G. Sozzi (DIA - Università di Parma)