SiC Technologies II

Das, Hrishikesh

Tuesday, 3 October 2017: 10:00-11:50

Chesapeake B (Gaylord National Resort and Convention Center)

Chair:

Hrishikesh Das

10:00

1324

(Invited) Material Challenges in Low Offcut Substrates for High Power SiC Devices

R. L. Myers-Ward (U.S. Naval Research Laboratory, Washington DC), C. Martin (II-VI Incorporated), N. A. Mahadik, R. Stahlbush (US Naval Research Laboratory), P. Klein, K. Daniels, A. K. Boyd (U.S. Naval Research Laboratory, Washington DC), C. R. Eddy Jr. (U.S. Naval Research Laboratory), and D. K. Gaskill (US Naval Research Laboratory)

1325

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes (Cancelled)

11:00

1326

Ni-Al-Ti Ohmic Contacts on 1 x 10²⁰ cm^-3 Al⁺ Ion Implanted 4H-SiC

R. Nipoti (CNR-IMM, Bologna, Italy), M. Puzzanghera (DIA - Università di Parma), M. Canino (CNR-IMM of Bologna), and G. Sozzi (DIA - Università di Parma)

11:30

1327

Difference of Near-Interface SiO₂ Structures between O₂-Oxidation and H₂O-Oxidation of 4H-SiC (0001) and Its Impact on MOS Interface Characteristics

K. Kita, H. Hirai, and K. Ishinoda (The University of Tokyo)

See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 7
See more of: Electronic and Photonic Devices and Systems

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