Technology Trends

Monday, 2 October 2017: 10:20-12:20
Chesapeake C (Gaylord National Resort and Convention Center)
Simon Deleonibus and Kenji Shiojima
(Invited) Modelling and Simulation of Advanced Semiconductor Devices
F. Adamu-Lema, M. Duan, S. Berrada, J. Lee, T. Al-Ameri, V. Georgiev (University of Glasgow), and A. Asenov (University of Glasgow, Synopsys)
(Invited) Non Volatile Resistive and Magnetic Memories:  Materials, Integration Challenges and Opportunities
M. C. Cyrille, E. Nowak, L. Tillie, G. Molas, G. Navarro, V. Sousa, N. Castellani, E. Vianello, N. Lamard, Y. Guerfi (CEA, LETI, MINATEC Campus; Univ. Grenoble Alpes), J. Langer, B. Ocker (Singulus Technologies), O. Boulle, G. Gaudin (CNRS - SPINTEC, CEA - INAC, Univ. Grenoble Alpes), K. Garello, P. Gambardella (Department of Materials, ETH Zurich), and L. Perniola (CEA, LETI, MINATEC Campus)
(Invited) A Confined Phase Change Memory for M-Type Storage Class Memory
W. Kim (IBM T.J. Watson Research Center), M. BrightSky (IBM T. J. Watson Research Center), T. Masuda (ULVAC Inc.), S. Kim (IBM T. J. Watson Research Center), R. Bruce (IBM T.J. Watson Research Center), F. Carta, G. Fraczak, A. Ray (IBM T. J. Watson Research Center), Y. Zhu (IBM Research Division, T. J. Watson Research Center), K. Suu (ULVAC, Inc.), and C. Lam (IBM T. J. Watson Research Center)