Electronic and Photonic Materials and Characterization 2

Tuesday, 3 October 2017: 10:00-12:00
Chesapeake C (Gaylord National Resort and Convention Center)
Chairs:
Hiroshi Iwai and Yasuo Takahashi
10:00
(Invited) Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices
S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda (Nagoya University)
10:30
(Invited) Evaluation of Coupled Triple Quantum Dots with Compact Device Structure
Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita (Hokkaido University), and A. Fujiwara (NTT Basic Research Laboratories, NTT Corporation)
11:00
Deep Level Assessment of n-Type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots
M. Aouassa (LMON, Faculté des Sciences, Tunisia), H. Vrielinck (University of Gent, Belgium), and E. Simoen (imec)
11:20
Substrate Effect on Light Emission of SSI-LEDs
S. Zhang, Y. Kuo (Texas A&M University), and X. Zhang (Xi’an Jiaotong University)
11:40
Electrical Characteristics of Fluorine-Doped Zinc Oxynitride Thin-Film Transistors
H. D. Kim, J. H. Kim, and H. S. Kim (Chungnam National University)