Electronic and Photonic Materials and Characterization 2

Tuesday, 3 October 2017: 10:00-12:00
Chesapeake C (Gaylord National Resort and Convention Center)
Hiroshi Iwai and Yasuo Takahashi
(Invited) Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices
S. Miyazaki, K. Yamada, K. Makihara, and M. Ikeda (Nagoya University)
(Invited) Evaluation of Coupled Triple Quantum Dots with Compact Device Structure
Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita (Hokkaido University), and A. Fujiwara (NTT Basic Research Laboratories, NTT Corporation)
Deep Level Assessment of n-Type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots
M. Aouassa (LMON, Faculté des Sciences, Tunisia), H. Vrielinck (University of Gent, Belgium), and E. Simoen (imec)
Substrate Effect on Light Emission of SSI-LEDs
S. Zhang, Y. Kuo (Texas A&M University), and X. Zhang (Xi’an Jiaotong University)
Electrical Characteristics of Fluorine-Doped Zinc Oxynitride Thin-Film Transistors
H. D. Kim, J. H. Kim, and H. S. Kim (Chungnam National University)