New Concepts for Oxide Memristors

Wednesday, 4 October 2017: 14:00-17:20
Camellia 4 (Gaylord National Resort and Convention Center)
Chair:
Xin Guo
14:00
15:00
Built-in Nonlinear Characteristics of Low Power Operating One-Resistor Selector-Less RRAM By Stacking Engineering
Y. C. Chen, Y. F. Chang (The University of Texas at Austin), C. Y. Lin (National Sun Yat-Sen University), X. Wu, G. Xu (The University of Texas at Austin), B. Fowler (The University of Austin), T. C. Chang (Department of Physics, National Sun Yat-Sen University), and J. C. Lee (University of Texas at Austin)
15:20
Break
16:10
(Invited) Resistance Switching in Silicon-Rich Silica: Electronic, Structural and Photonic Perspectives
A. J. Kenyon, A. Mehonic, M. Munde, W. H. Ng, M. Buckwell, L. Montesi, K. Zarudnyi (University College London), M. Bosman (Institute of Materials Research & Engineering (A*STAR)), T. Gerard, and A. L. Shluger (University College London)
16:40
Design and Application of Strained Interface Heterostructures in Resistive Switching Devices
W. J. Bowman (Materials Science and Engineering, MIT), S. Schweiger (Electrochemical Materials ETH Zurich), R. Pfenninger (Electrochemical Materials, MIT), E. Izadi (School for Engineering of Matter, Transport and Energy ASU), A. Darbal (AppFive), P. A. Crozier (School for Engineering of Matter, Transport and Energy ASU), and J. L. M. Rupp (Electrochemical Materials, MIT)
 
1221
Anodic Oxides As Electrolytes for Resistive Switching Devices (Cancelled)