Interfaces Engineering

Tuesday, 3 October 2017: 08:30-12:20
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Shinichi Takagi and Koji Kita
08:30
827
09:00
(Invited) “Magic of Doped High k Films for Advanced Memory and Ferroelectric Applications Using 300mm QXP ALD” - Zia Karim, Jerry Mack, Vincent Vezin and Niloy Mukherjee, AIXTRON and Asif I Khan, Georgia Tech.
 
828
(Invited) Modifying Silicon/Dielectric & Silicon/Metal Interfaces Using Sub-2 Nm Pt Nanoparticles (Cancelled)
09:30
Break
09:50
829
(Invited) Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs
S. Bhattacharjee (Indian Institute of Science), K. L. Ganapathi (CeNSE,Indian Institute of Science, Bangalore, India), S. Mohan (Indian Institute of Science), and N. Bhat (Indian Institute of Science, Bangalore, India)
10:20
830
(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks
S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, S. Yoon, and M. Takenaka (The University of Tokyo)
10:50
831
(Invited) Interface Engineering for Nanoelectronics
C. A. Hacker, R. C. Bruce, and S. Pookpanratana (National Institute of Standards and Technology)
11:20
832
(Invited) Interface Control of Advanced Electronic Devices - High-k/Metal Gate System and Magnetic Tunneling Junction
M. Niwa (CIES, Tohoku University), S. Sato (CIES, Tohoku University, Micron Memory Japan, Inc), and T. Endoh (CIES, Tohoku University)
11:50
833
(Invited) Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study
T. Umeda (Institute of Applied Physics, University of Tsukuba), M. Okamoto, H. Yoshioka (Advanced Power Electronics Research Center, AIST), G. W. Kim, S. Ma, R. Arai (University of Tsukuba), T. Makino, T. Ohshima (Takasaki Advanced Radiation Research Institute, QST), and S. Harada (Advanced Power Electronics Research Center, AIST)