Photoresist and Dry Etch Residue Removal

Saga, Koichiro

Tuesday, 3 October 2017: 14:00-15:40

Chesapeake I (Gaylord National Resort and Convention Center)

Chairs:

Koichiro Saga and Richard E Novak

14:00

1074

Thermally Activated Gas-Phase Chemical Reactions in a Single-Wafer Wet Clean Process

M. N. Kawaguchi, J. Zhu, C. Fischer, X. Man, B. Bandarapu, and S. Kon (Lam Research Corporation)

1075

Nanometric Particles Removal during Photoresist Stripping (Cancelled)

14:40

1076

Nearly Anhydrous Undissociated HF for the Removal of Hf / Ta / Zr Based Polymers after Plasma Etch, Selectively to Aluminum

M. Cazes (Technic France), L. Broussous, P. Garnier (STMicroelectronics), C. Pizzetti (Technic France), L. Gabette (CEA-LETI MINATEC), and P. Besson (Univ. Grenoble Alpes)

15:00

1077

Characterization of Ammonium Silicate Residue during Polysilazane (PSZ) Dry Etching in NF₃/ H₂O Gas Chemistry

H. T. Kim, M. S. Kim (Hanyang University), J. S. Lee, G. M. Choi (SK Hynix Semiconductor Inc), and J. G. Park (Hanyang University)

15:20

Break

See more of: G01: 15th International Symposium on Semiconductor Cleaning Science and Technology (SCST 15)
See more of: Electronic Materials and Processing

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