SiC Technologies I

Tuesday, 3 October 2017: 08:00-09:20
Chesapeake B (Gaylord National Resort and Convention Center)
Chairs:
N. Ohtani and Jaime A. Freitas Jr.
08:00
(Invited) SiC MOSFET Reliability and Implications for Qualification Testing
A. Lelis (U.S. Army Research Laboratory), R. Green, and D. Habersat (US Army Research Laboratory)
08:30
(Invited) Requirements for Highly Accurate Multiphysics Modeling of SiC Power MOSFETs and Power Modules
U. Grossner, B. Kakarla, T. Ziemann, J. Muting, R. Stark, and I. Kovacevic-Badstuebner (ETH Zurich)
09:00
(Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C
R. Nipoti (CNR-IMM Bologna), M. Canino (CNR-IMM of Bologna), M. Puzzanghera, and G. Sozzi (DIA - Università di Parma)