SiC Technologies I

Tuesday, 3 October 2017: 08:00-09:20
Chesapeake B (Gaylord National Resort and Convention Center)
N. Ohtani and Jaime A. Freitas Jr.
(Invited) SiC MOSFET Reliability and Implications for Qualification Testing
A. Lelis (U.S. Army Research Laboratory), R. Green, and D. Habersat (US Army Research Laboratory)
(Invited) Requirements for Highly Accurate Multiphysics Modeling of SiC Power MOSFETs and Power Modules
U. Grossner, B. Kakarla, T. Ziemann, J. Muting, R. Stark, and I. Kovacevic-Badstuebner (ETH Zurich)
(Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C
R. Nipoti (CNR-IMM, Bologna, Italy), M. Canino (CNR-IMM of Bologna), M. Puzzanghera, and G. Sozzi (DIA - Università di Parma)