H02 - Device, Modeling, Simulation, and Reliability

Monday, 10 October 2022: 08:00-12:00
Room 214 (The Hilton Atlanta)
Chairs:
Yue Kuo , Olivier Bonnaud and Kenji Nomura
08:00
Welcoming Remarks
08:10
(Invited) Approach to Oxide Tfts with High Mobility & Stability
H. Hosono (Tokyo Institute of Technology)
08:40
(Invited) Improved Thin Film Transistor Model Predicts TFT Operation in the THz Range
M. Shur, X. Liu (Rensselaer Polytechnic Institute), and T. Ytterdal (University of Trondheim)
09:10
(Invited) Thin-Film Transistor Accumulation-Mode Modeling
J. F. Wager (Oregon State University)
09:40
Intermission
10:10
(Invited) Modeling Oect Devices for Circuit Simulations
L. E. Calvet (C2N,Universite Paris-Saclay-CNRS), Z. Li (C2N Université Paris-Saclay, Palaiseau, France), H. Tseng, A. Weißbach (IAPP, TU Dresden, Germany), and H. Kleemann (TU Dresden)
10:40
Negative Bias Illumination Stress on a-Igzo TFT with a Top Barrier
J. C. Chiu, E. Sarkar (Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan), Y. M. Liu, S. L. Li (Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan), M. X. Lee (Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan), Y. C. Chen (Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan), C. C. Yen, T. L. Chen (Technology Integration Department I, Innolux Corporation, Tainan 744, Taiwan), C. H. Chou (Technology Development Division Group II, Innolux Corporation, Tainan 744, Taiwan), and C. Liu (Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan)
11:00
Intrinsic Channel Mobility Associated with Extended State Transport in Igzo Thin-Film Transistors
M. S. Kabir (Rochester Institute of Technology), R. G. Manley (Corning Incorporated), and K. D. Hirschman (Rochester Institute of Technology)