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(Invited) PE-ALD Al2O3 Gate Dielectric for High Performance InGaAs FinFET Applications

Monday, 1 October 2018: 08:30
Universal 7 (Expo Center)

ABSTRACT WITHDRAWN

See more of: High-k Dielectrics and Processing
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
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