High-k Dielectrics and Processing

Monday, 1 October 2018: 08:25-10:40
Universal 7 (Expo Center)
Chairs:
Durgamadhab Misra , Shadi Dayeh and Stefan De Gendt
08:25
Welcoming Remarks
 
685
(Invited) PE-ALD Al2O3 Gate Dielectric for High Performance InGaAs FinFET Applications (Cancelled)
09:00
686
Highly Selective Silicon Dry Chemical Etch Technique for Advanced FinFET Technology
Z. Bi, N. J. Loubet (IBM Research), A. Greene, C. Yeung, J. Zhang, T. Devarajan, M. Sankarapandian, H. Zhou, M. Wang (IBM Semiconductor Technology Research), R. Conti (IBM Research), N. Saulnier (IBM Semiconductor Technology Research), M. Stolfi, A. Bhatnagar, M. Cogorno, and J. Zhang (Applied Materials)
09:20
687
The Relationship between the Oxygen Vacancies Density with the Electronic and Optical Properties of Hafnium Oxide
D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), V. N. Kruchinin (Rzhanov Institute of Semiconductor Physics SB RAS), and M. S. Lebedev (Nikolaev Institute of Inorganic Chemistry SB RAS)
09:40
Break
10:00
688
TiN/Al2O3 Interface Study through ALD Process Modulations
M. Leménager (Murata Integrated Passive Solutions, Univ Lyon, INSA-Lyon, Laboratoire Ampère), F. Voiron, J. El Sabahy, F. Lallemand (Murata Integrated Passive Solutions), and B. Allard (Univ Lyon, INSA-Lyon, Laboratoire Ampère)
10:20
689
Advanced Millisecond Annealing Approaches for High-k Metal Gate and Contact Scaling
S. Sharma, J. Chen, B. Ng, R. C. McIntosh, S. Muthukrishnan, K. Raman Sharma, H. Graoui, and A. Mayur (Applied Materials Inc.)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
See more of: Dielectric Science and Materials
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