Copper metallization faces to trade-off between manufacturability / reliability and performance (Line resistance, capacitance, via resistance) in logic LSI in the 7 nm node and beyond. Industry started to explore alternative conductors which have intrinsic material features to lead to superior electromigration reliability to copper and come to have competitive resistance performance in fine dimension where the surface scattering of electrons dominates the resistivity of interconnects. In this talk, an advanced copper interconnect technology – through-cobalt self-forming barrier (tCoSFB) and through-ruthenium self-forming barrier (tRuSFB) which maximize copper volume by thinning down of the diffusion barrier without losing reliability is introduced. Manganese based diffusion barrier is formed with Mn atoms which diffused through the Co or Ru wetting layer. Integrity of the tCoSFB / tRuSFB copper interconnect is discussed and compared to other copper metallization schemes and alternative conductors. It is concluded that tCoSFB / tRuSFB has a potential to extend the use of copper interconnect to 7 nm node and beyond.