Memory Devices and Processing

Kita, Koji

Tuesday, 2 October 2018: 16:20-17:40

Universal 7 (Expo Center)

Chairs:

Koji Kita and Heiji Watanabe

16:20

716

Structural and Charging Stability of Metal Nanodot Memory in SiO₂; First-Principles Study

T. Nakayama, S. Yamazaki, and Y. Shiraishi (Department of Physics, Chiba University)

16:40

717

Bilayer Dielectrics for RRAM Devices

D. Misra (New Jersey Institute of Technology), S. Sultana (Indian Institute of Science), B. Jain (NJIT), N. Bhat (Indian Institute of Science, Bangalore, India), K. Tapily (TEL Technology Centre, America, LLC), R. D. Clark (TEL Technology Center, America, LLC), S. Consiglio (TEL Technology Center), C. S. Wajda, and G. J. Leusink (TEL Technology Center, America, LLC)

17:00

718

Effect of Misfit Dislocations in Junctions and Base Thickness on Latch-up Characteristics in Two-Terminal Vertical Thyristor-Based Capacitorless Memory

M. W. Kim, S. H. Song, G. J. Oh, J. S. Yoo, S. D. Yoo, T. H. Shim, E. K. Kim, and J. G. Park (Hanyang University)

17:20

Concluding Remarks

See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
See more of: Dielectric Science and Materials

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