Novel Devices

Tuesday, 2 October 2018: 13:30-16:20
Universal 7 (Expo Center)
Chairs:
Ken Uchida and Muhammad Mustafa Hussain
13:30
710
(Invited) Homogeneous and Heterogeneous Material Based Nanotube Tunnel Field Effect Transistor with Core-Shell Gate Stacks
M. M. Hussain, N. Elatab (KAUST), A. N. Hanna (KAUST and University of California, Los Angeles), A. M. Hussain (IIIT and KAUST), H. M. Fahad (KAUST and University of California, Berkeley), and S. Shaikh (KAUST)
14:00
711
(Invited) Bottom-up Grown Nanowire Quantum Devices
E. P. A. M. Bakkers (TU Eindhoven)
14:30
712
(Invited) Gate Stack Technology for Advanced GaN-Based Mos Devices
H. Watanabe, T. Yamada, M. Nozaki, T. Hosoi, and T. Shimura (Osaka University)
15:00
Break
15:10
713
(Invited) Design and Reliability of GaN Power HEMT Technology
B. Shankar, A. Soni, S. Dutta Gupta, R. Sengupta, H. Khand, N. Mohan, S. Raghavan, N. Bhat, and M. Shrivastava (Indian Institute of Science)
15:30
714
(Invited) Low-Power Nanoscale Sensors for Low-Concentration Hydrogen Detection in Expired Air
K. Uchida, T. Tanaka, and T. Yokoyama (Keio University)
16:00
715
Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation
K. Kita, M. Nishida, R. Sakuta, and H. Hirai (The University of Tokyo)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
See more of: Dielectric Science and Materials
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