Adhesive, Anodic and Temporary Bonding

Monday, 1 October 2018: 14:00-16:00
Universal 14 (Expo Center)
Chairs:
Roy Knechtel and François Rieutord
14:00
948
(Invited) Adhesive Wafer Bonding for Heterogeneous System Integration
S. J. Bleiker, V. Dubois, S. Schröder, F. Ottonello Briano, K. B. Gylfason, G. Stemme, and F. Niklaus (KTH Royal Institute of Technology)
14:40
949
Benefits of Live View of Bond Formation and Alignment for Adhesive Bonding Characterisation
A. Draisey, T. Rogers, and A. Malik (Applied Microengineering Ltd)
15:00
950
Temporary Bonding Technologies for Thin Wafer Handling
P. Mazumder, R. Bellman, R. G. Manley, I. Bhattacharyya, and K. Adib (Corning Research and Development Corporation)
15:20
951
Temporary Bonding for High Temperature Processing of Thin Glass Using Plasma Activated DLC Layer
R. Bellman, P. Mazumder, R. G. Manley, K. Adib, and S. Liu (Corning Research and Development Corporation)
15:40
952
Anodic-like Wafer Bonding of Copper/Silicon Done at Room Temperature by Schottky Barrier Structure
B. T. H. Lee and L. Cheng (Dept. of Mechanical Engineering, National Central Univ.)
See more of: G01: Semiconductor Wafer Bonding: Science, Technology, and Applications 15
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