Semiconductor Process 1

Monday, 1 October 2018: 09:00-11:20
Universal 15 (Expo Center)
Chairs:
Wei-Ping Dow , Masanori Hayase , Lingyun Wei , Kazuo Kondo , Fred Roozeboom , Gangadhara Mathad , Mitsumasa Koyanagi and Yasuhiko Takeno
09:00
1111
(Invited) Electrodeposition of Copper and Cobalt in Presence of Some Organic Additives
Q. Huang, T. W. Lyons, Y. Hu, and W. D. Sides (The University of Alabama)
09:40
1112
Superconformal Cu Electrodeposition
T. P. Moffat, G. Liu (NIST), S. Zou (American University), L. Y. Ou Yang, T. Braun, M. Walker, D. Wheeler, L. Richter, and D. Josell (NIST)
10:00
Break
10:20
1113
Megasonic Enhanced Photo Resist Removal Using Unique Solvent Free Phase-Fluids on an Advanced Single Wafer Resist Processing System
D. Dussault (ProSys Megasonics), M. Weinhart, T. Zenger (EV Group E.Thallner GmbH), and I. Eichinger (intelligent fluids GmbH)
10:40
1114
(Invited) Electro/Electroless Grafting of Organic Dielectric Film on Silicon Surface and Its Application on through Silicon Via
M. Li, T. Hang, Y. Liu, J. Zhang, H. Ling, A. Hu, and L. Gao (Shanghai Jiao Tong University)
See more of: G05: Materials, Formulation, and Processes for Semiconductor, 2.5 and 3D Chip Packaging, and High Density Interconnection PCB
See more of: Electronic Materials and Processing
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