Area Selective Deposition

Monday, 1 October 2018: 09:00-12:00
Universal 16 (Expo Center)
Chairs:
Andrea Illiberi and J. W. Elam
09:00
982
(Invited) Continued Device Miniaturization Enabled By New Materials Innovations and Advanced Patterning Schemes
M. Saly (Applied Materials)
09:40
Break
 
983
(Invited) Using Amorphous Carbon to Enable Area-Selective Atomic Layer Deposition for Advanced Patterning Applications (Cancelled)
10:40
984
Inherent Area-Selective Growth and Nucleation Enhancement during Ru ALD Using the RuO4-Precursor and H2-Gas
M. M. Minjauw (Department of Solid State Sciences, Ghent University), H. Rijckaert, I. Van Driessche (Department of Chemistry, Ghent University), C. Detavernier, and J. Dendooven (Department of Solid State Sciences, Ghent University)
11:00
985
New Process Concepts Towards Area-Selective Atomic Layer Deposition and Atomic Layer Etching of Zinc Oxide
A. Mameli (Eindhoven University of Technology), M. A. Verheijen (Philips Innovation Services), B. Karasulu (Eindhoven University of Technology, University of Cambridge), A. J. M. Mackus, W. M. M. Kessels, and F. Roozeboom (Eindhoven University of Technology)
11:20
986
(Invited) Precursor Innovations Directed Toward the Area Selective, Thermal Atomic Layer Deposition of Electropositive Metal Thin Films
C. H. Winter (Wayne State University)
See more of: G02: Atomic Layer Deposition Applications 14
See more of: Electronic Materials and Processing
<< Previous Session | Next Session >>