2239
		Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability Improvement
	
					
	
	Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability Improvement
	Wednesday, October 30, 2013: 08:40
	Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
	
	
				
					
						Ingrid Shao, PH.D
					
				
				
				
				,
					IBM T. J. Watson Research Center, Yorktown Heights, NY
				
			
		
			
				
					
						Tien Cheng, Ph.D
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						Paul Findeis, Ph.D
					
				
				
				
				,
					IBM Microelectronics Division
				
			
		
			
				
					
						James Kelly
					
				
				
				
				,
					IBM Albany Nanotechnology Center, Albany, NY
				
			
		
			
				
					
						Shafaat Ahmed
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						Matthew Angyal
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						Yiheng Xu, Ph.D
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						B. Li
					
				
				
				
				,
					IBM Microelectronics Division
				
			
		
			
				
					
						J. Tinkler
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						Naftali Lustig, Ph.D
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						Edward Engbrecht
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						C. Truong
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						M. Chudzik
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
			
				
					
						S. Grunow
					
				
				
				
				,
					IBM Semiconductor Research & Development Center
				
			
		
	
Abstract:
- E12-2239 (8.4KB) - Abstract Text
	See more of: Back-end Processing 2
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
	
	See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
	
		
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