2239
Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability Improvement
Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability Improvement
Wednesday, October 30, 2013: 08:40
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Ingrid Shao, PH.D
,
IBM T. J. Watson Research Center, Yorktown Heights, NY
Tien Cheng, Ph.D
,
IBM Semiconductor Research & Development Center
Paul Findeis, Ph.D
,
IBM Microelectronics Division
James Kelly
,
IBM Albany Nanotechnology Center, Albany, NY
Shafaat Ahmed
,
IBM Semiconductor Research & Development Center
Matthew Angyal
,
IBM Semiconductor Research & Development Center
Yiheng Xu, Ph.D
,
IBM Semiconductor Research & Development Center
B. Li
,
IBM Microelectronics Division
J. Tinkler
,
IBM Semiconductor Research & Development Center
Naftali Lustig, Ph.D
,
IBM Semiconductor Research & Development Center
Edward Engbrecht
,
IBM Semiconductor Research & Development Center
C. Truong
,
IBM Semiconductor Research & Development Center
M. Chudzik
,
IBM Semiconductor Research & Development Center
S. Grunow
,
IBM Semiconductor Research & Development Center
Abstract:
- E12-2239 (8.4KB) - Abstract Text
See more of: Back-end Processing 2
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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