2070
Through-Silicon-Via (TSV) Filling By the Electro-Chemical Deposition of Cu With Modified Microstructures By Ultra-Fast Pulsed Current

Tuesday, October 29, 2013: 10:40
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Sanghyun Jin, Master , Hanyang University
Geon Wang, Bachelor , Hanyang University
Bongyoung Yoo, Ph. D. , Gyeonggi-do, Hanyang University, Ansan, South Korea

Abstract:

  • E7-2070 (608.3KB) - Abstract Text
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