1891
Self-Cleaning and Electrical Characteristics of ZrO2 (HfO2)/GaAs MOS Capacitor Fabricated by Atomic Layer Deposition

Friday, November 1, 2013: 11:40
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Curtis White , Norfolk State University
Thomas Donovan , Norfolk State University
Irving Cashwell , Norfolk State University
R. B. Konda , Norfolk State University
D. R. Sahu , University of the Witwatersrand
Bo Xiao , Norfolk State University
M. Bahoura , Norfolk State University
Aswini K Pradhan , Norfolk State University, Norfolk, VA

Abstract:

See more of: III-V and Silicon MOS
See more of: E2: Atomic Layer Deposition Applications 9
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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