1890
Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology
Friday, November 1, 2013: 11:20
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Guilei Wang
,
Chinese Academy of Sciences, Beijing, China
Qiang Xu
,
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Tao Yang, Doctor
,
Institute of Microelectronics of Chinese Academy of Sciences
Jun Luo, Doctor
,
Institute of Microelectronics of Chinese Academy of Sciences
Jinjuan Xiang
,
Institute of Microelectronics of Chinese Academy of Sciences
Jing Xu, Doctor
,
Institute of Microelectronics of Chinese Academy of Sciences
Gaobo Xu
,
Chinese Academy of Sciences
Chunlong Li
,
Institute of Microelectronics of Chinese Academy of Sciences
Junfeng Li
,
Institute of Microelectronics of Chinese Academy of Sciences
Jiang Yan
,
Institute of Microelectronics of Chinese Academy of Sciences
Chao Zhao
,
Institute of Microelectronics of Chinese Academy of Sciences
Dapeng Chen
,
Institute of Microelectronics of Chinese Academy of Sciences
Tianchun Ye
,
Institute of Microelectronics of Chinese Academy of Sciences
