III-V and Silicon MOS

Friday, November 1, 2013: 10:00-12:05
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
A. Londergan and O. van der Straten
10:00
1887
(Invited) Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
Cagla Ozgit-Akgun, Bilkent University; Inci Donmez, Bilkent University; Necmi Biyikli, Ph.D., Bilkent University
10:40
1888
A Comprehensive Study of Thermal Stability on Microstructure and Residual Stress for ALD HfZrO2 Films at 28nm HKMG CMOS Applications
Chen-Kuo Chiang, United Microelectronics Corporation; J. C. Chang, United Microelectronics Corporation; C. C. Chien, United Microelectronics Corporation; C. L. Yang, United Microelectronics Corporation; J. Y. Wu, United Microelectronics Corporation
11:00
1889
Ultrathin SiO2 Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone
Lei Han, University of Kentucky; Zhi David Chen, University of Electronic Science & Technology of China
11:20
1890
Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology
Guilei Wang, Chinese Academy of Sciences; Qiang Xu, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Tao Yang, Doctor, Institute of Microelectronics of Chinese Academy of Sciences; Jun Luo, Doctor, Institute of Microelectronics of Chinese Academy of Sciences; Jinjuan Xiang, Institute of Microelectronics of Chinese Academy of Sciences; Jing Xu, Doctor, Institute of Microelectronics of Chinese Academy of Sciences; Gaobo Xu, Chinese Academy of Sciences; Chunlong Li, Institute of Microelectronics of Chinese Academy of Sciences; Junfeng Li, Institute of Microelectronics of Chinese Academy of Sciences; Jiang Yan, Institute of Microelectronics of Chinese Academy of Sciences; Chao Zhao, Institute of Microelectronics of Chinese Academy of Sciences; Dapeng Chen, Institute of Microelectronics of Chinese Academy of Sciences; Tianchun Ye, Institute of Microelectronics of Chinese Academy of Sciences
11:40
1891
Self-Cleaning and Electrical Characteristics of ZrO2 (HfO2)/GaAs MOS Capacitor Fabricated by Atomic Layer Deposition
Curtis White, Norfolk State University; Thomas Donovan, Norfolk State University; Irving Cashwell, Norfolk State University; R. B. Konda, Norfolk State University; D. R. Sahu, University of the Witwatersrand; Bo Xiao, Norfolk State University; M. Bahoura, Norfolk State University; Aswini K Pradhan, Norfolk State University
12:00
Concluding Remarks
See more of: E2: Atomic Layer Deposition Applications 9
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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