1889
Ultrathin SiO2 Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone

Friday, November 1, 2013: 11:00
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Lei Han , University of Kentucky
Zhi David Chen , 453 F. Paul Anderson Tower, University of Electronic Science & Technology of China, Lexington, KY

Abstract:

See more of: III-V and Silicon MOS
See more of: E2: Atomic Layer Deposition Applications 9
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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