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Lateral Nonuniformity of the Tunneling Current of Al/SiO2/p-Si Capacitor in Inversion Region Due to Edge Fringing Field Effect

Wednesday, October 30, 2013: 15:10
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Han-Wei Lu, PhD student , National Taiwan University, Taipei, Taiwan
Jenn-Gwo Hwu, PhD , National Taiwan University

Abstract:

See more of: Characterization
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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