2241
Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height

Wednesday, October 30, 2013: 09:20
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Keisuke Yamamoto , Kasuga-koen, 6-1, Kyushu University, Kasuga, Japan
Kojiro Asakawa , Kyushu University
Dong Wang , Kyushu University
Hiroshi Nakashima , Kasuga-koen 6-1, Kyushu University, Kasuga, Japan

Abstract:

See more of: Back-end Processing 2
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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