Single Crystalline Beta-FeSi2 Nanowires: Growth and Their Physical Properties

Tuesday, May 13, 2014
Grand Foyer, Lobby Level (Hilton Orlando Bonnet Creek)
C. Y. Yang, W. J. Huang, and K. C. Lu (Department of Materials Science and Engineering, National Cheng Kung University)
In this work, self-catalyzed beta-FeSi2 nanowires were synthesized via chemical vapor deposition method where the fabrication of beta-FeSi2 nanowires occurred on Si(100) substrates through the decomposition of the single-source precursor of anhydrous FeCl3 powders at 650-850℃. We varied temperatures, duration time and the flow rates of carrier gases to control and investigate the growth of the nanowires. The morphology of the beta-FeSi2 nanowires was observed with scanning electron microscopy (SEM) and the structure of them was analyzed with X-ray diffraction (XRD) and transmission electron microscopy (TEM). Additionally, we have measured and discussed the properties of the silicide nanowires, including field emission, magnetism and photoluminescence. The study on beta-FeSi2 nanowires, featuring a high optical coefficient, a direct band gap of ~0.85 eV and an optical wavelength of 1.5μm, supports the development of infrared light detectors, opto-electric devices, and photovoltaics.