P2 Poster Session

Tuesday, May 13, 2014: 18:00-20:00
Grand Foyer, Lobby Level (Hilton Orlando Bonnet Creek)
Raman Characterization of Poly-Si Channel Materials for 3D Flash Memory Device Applications
W. S. Yoo, T. Ishigaki, T. Ueda, K. Kang (WaferMasters, Inc.), D. S. Sheen, S. S. Kim, M. S. Ko, W. S. Shin, N. Y. Kwak, and B. S. Lee (SK hynix, Inc.)
Novel Clean Concept of Advanced Patterning Film (Amorphous Carbon) for Beyond 2xnm Generation Self-Aligned Double-Patterning (SADP) Process
H. Tai, Y. M. Liao, W. T. Liu, W. C. Peng, and T. H. Ying (Powerchip Technology Corporation)
Novel Poly Gate Shaping by Wet Etch Process in 2xnm NAND Flash Device and Beyond
Y. M. Liao, H. Tai, W. T. Liu, H. M. Chang, W. C. Peng, T. H. Ying (Powerchip Technology Corporation), C. H. Tang, and C. C. Yang (Avantor Performance Materials Inc., Taiwan)
Formation of Large Grain Ge Single Crystal on Insulating Substrate by Liquid-Solid Coexisting Annealing of a-Ge(Sn)
R. Matsumura, Y. Kai, H. Chikita, T. Sadoh, and M. Miyao (Kyushu University)
Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching
H. Tanaka, T. Suwa, A. Teramoto (Tohoku University), T. Motoya (Mitsubishi Electric Corporation), S. Sugawa, and T. Ohmi (Tohoku University)
Single Crystalline Beta-FeSi2 Nanowires: Growth and Their Physical Properties
C. Y. Yang, W. J. Huang, and K. C. Lu (Department of Materials Science and Engineering, National Cheng Kung University)
Process Parameters Effect on Deep Silicon Etching for High Density Capacitor Structure (Cancelled)
Multilevel Resistive Memory Switching in Amorphous Ternary High K-Dielectric Oxide LaGdO3 Thin Films Grown By Pulsed Laser Deposition
P. Misra (University of Puerto Rico), S. P. Pavunny (Department of Physics, University of Puerto Rico, San Juan, PR 00936, USA), and R. S. Katiyar (Department of Physics, University of Puerto Rico-Rio Piedras)