P1 CMP Poster Session

Tuesday, May 13, 2014: 18:00-20:00
Grand Foyer, Lobby Level (Hilton Orlando Bonnet Creek)
1437
Reduction of Metal Contaminants Level on the Silicon Wafer Surface Using Chemical Additive during Chemical Mechanical Polishing
H. Cui, J. G. Park, J. Park, S. Yun, and E. B. Seo (Hanyang University)
1438
Research of New Concept Dishing-Less Tungsten CMP Slurry Using Using 25 Nm Crystal Zirconium Dioxide Abrasive
E. B. Seo, H. Cui, S. Yun, J. Park, and J. G. Park (Hanyang University)
See more of: P1: Chemical Mechanical Polishing 13
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