GaN-based Sensor and Electronics

Tuesday, May 13, 2014: 08:15-12:10
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Albert G. Baca and Brent P Gila
08:15
(Invited) Rapid C-reactive Protein Detection with AlGaN/GaN High Electron Mobility Transistors in an Integrated Microfluidic System
Y. W. Kang, C. L. Lin, K. W. Chang, W. H. Chang, G. B. Lee, and Y. L. Wang (National Tsing Hua University)
08:45
(Invited) Large Area Semipolar GaN Grown on Foreign Substrates
F. Scholz, M. Caliebe, T. Meisch, M. Alimoradi-Jazi, M. Klein, M. Hocker, B. Neuschl, I. Tischer, and K. Thonke (Ulm University)
09:15
(Invited) Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes
J. H. Ryou (University of Houston), J. Kim, S. Choi, H. J. Kim, Z. Lochner, M. H. Ji, M. M. Satter, T. Detchprohm, P. D. Yoder, R. D. Dupuis (Georgia Institute of Technology), M. Asadirad (University of Houston), J. Liu (Suzhou Institute of Nano-tech and Nano-bionics), J. S. Kim (Chonbuk National University), A. Fischer, R. Juday, F. Ponce (Arizona State University), M. K. Kwon (Chosun University), D. Yuan, R. Guo, and S. Das (Georgia Institute of Technology)
09:45
Break
10:00
Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation
S. Li, Y. H. Hwang, Y. L. Hsieh, F. Ren, S. J. Pearton, E. Patrick, and M. E. Law (University of Florida)
10:20
(Invited) High Temperature Wireless Smart Sensor Technology Based on Silicon Carbide Electronics
G. W. Hunter, M. C. Scardelletti, G. E. Ponchak, G. M. Beheim, J. A. Mackey, D. J. Spry, R. D. Meredith, F. W. Dynys, P. G. Neudeck, J. L. Jordan (NASA Glenn Research Center), L. Y. Chen (Ohio Aerospace Institute), K. Harsh (Sporian Microsystems), and C. A. Zorman (Case Western Reserve University)
10:50
(Invited) Planar Field Effect Transistor Biosensors: Toward Single Molecular Detection and Clinical Applications
Y. Wang, P. C. Sondergaard, A. Theiss, S. C. Lee (The Ohio State University), and W. Lu (The Ohio State University, Gwangju Institute of Science and Technology)
11:20
(Invited) Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors
N. Rohrbaugh, I. Bryan, Z. Bryan, R. Collazo, and A. Ivanisevic (North Carolina State University)
11:50
Investigation of Traps in AlGaN/GaN HEMTs by Sub-Bandgap Optical Pumping under DC and Gate-Lag Measurement
T. S. Kang, D. Cheney, B. P. Gila, F. Ren, and S. J. Pearton (University of Florida)