CMP of Metals

Tuesday, May 13, 2014: 08:20-09:30
Bonnet Creek Ballroom VII, Lobby Level (Hilton Orlando Bonnet Creek)
Chair:
Yaw S. Obeng
08:20
Introductory Remarks
08:30
1422
W CMP Initiation Mechanism Study Using in-Situ Metrologies
K. Xu, T. Y. Liu, S. H. Shen, Y. Wang, I. Carlsson, B. Swedek, T. Kitajima, and W. C. Tu (Applied Materials)
08:50
1423
Effect of Various W Film and Barrier Material on the Corrosion during W CMP
M. C. Kang (R&D Division, SKhynix Semiconductor Inc.)
09:10
1424
Chemically Impregnated Abrasives Provide High Planarization Efficiency Copper CMP Slurry
R. Ihnfeldt (General Engineering & Research, L.L.C.)
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