High Mobility Channels

Tuesday, May 13, 2014: 14:00-17:40
Flagler, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Evgeni Gousev and P. J. Timans
14:00
1454
(Invited) Strained Germanium Nanowire MOSFET with Low-Parasitic Resistance Metal Source/Drain
K. Ikeda (National Institute of Advanced Industrial Science and Technology (AIST)), Y. Kamimuta (National Institute of Advanced Industrial Science and Technology), Y. Moriyama, M. Ono, M. Oda, T. Irisawa (National Institute of Advanced Industrial Science and Technology (AIST)), and T. Tezuka (National Institute of Advanced Industrial Science and Technology)
14:40
1455
(Invited) Significant Enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface
C. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, and A. Toriumi (The University of Tokyo, JST-CREST)
15:20
Break
15:40
1456
(Invited) Reducing EOT and Interface Trap Densities of High-k/III-V Gate Stacks
V. Chobpattana, T. Mates, W. Mitchell, J. Zhang, and S. Stemmer (University of California, Santa Barbara)
16:20
1457
(Invited) P-Type III-Sb MOSFET on a Metamorphic Substrate: Towards All III-V CMOS
S. Madisetti, V. Tokranov, A. Greene, M. Yakimov, S. Sasaki, M. Hirayama, S. Novak (SUNY College of Nanoscale Science and Engineering), S. Bentley, A. Jacob (GLOBALFOUNDRIES), and S. Oktyabrsky (SUNY College of Nanoscale Science and Engineering)
17:00
1458
(Invited) MOCVD of III-V Compounds on Silicon Substrate-Status and Challenges
M. Heuken (AIXTRON SE)
See more of: P2: Silicon Compatible Materials, Processes and Technologies for Advanced Integrated Circuits and Emerging Applications 4
See more of: Electronic Materials and Processing
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