Device Technology - II

Tuesday, 26 May 2015: 13:30-16:20
Williford Room B (Hilton Chicago)
Francisco Gamiz and Yasuhisa Omura
(Invited) Ultralow-Voltage Design and Technology of Silicon-on Thin-Buried-Oxide (SOTB) CMOS for High Energy Efficient Electronics in IoT Era
Y. Yamamoto, H. Makiyama, T. Yamashita, H. Oda, S. Kamohara, N. Sugii, Y. Yamaguchi (Low-power Electronics Association & Project (LEAP)), T. Mizutani, M. Kobayashi, and T. Hiramoto (The University of Tokyo)
(Invited) Advanced Semiconductor Devices for Future CMOS Technologies
C. Claeys (imec, KU Leuven), D. Chiappe (imec), N. Collaert, J. Mitard (Imec), J. Radu, R. Rooyackers (imec), E. Simoen, A. Vandooren, A. Veloso (Imec), N. Waldron, L. Witters (imec), and A. Thean (Imec)
N-Junctionless Transistor Prototype: Manufacturing Using a Focused Ion Beam System
L. P. B. Lima (School of Electrical Engineering, University of Campinas, Chemistry Department, KULeuven), M. V. P. dos Santos, M. A. Keiler (School of Electrical Engineering, University of Campinas), H. F. W. Dekkers (Imec), S. De Gendt (imec vzw), and J. A. Diniz (School of Electrical Engineering, University of Campinas, Center for Semiconductor Components, Unicamp)
Using the Wave Layout Style to Boost the Digital ICs Electrical Performance in the Radioactive Environment
R. Navarenho de Souza, M. Guazzeli da Silveira, and S. P. Gimenez (University Center of FEI)
Germanium Junctionless MOSFET with Steep Subthreshold Swing
M. Gupta and A. Kranti (Indian Institute of Technology Indore)
A Novel U-Shaped Finfet with Vertical Channels
Y. Liu (Institute of Microelectronics, CAS), H. Yin (Institute of Microelectronics,CAS), R. Li, H. Zhu, C. Zhao (Institute of Microelectronics, CAS), P. Wang (Fudan University), S. Mei (XMC, Wuhan), and T. Ye (Institute of Microelectronics, CAS)