Effect of Particle Contamination on Extreme Ultraviolet (EUV) Mask and Megasonic Cleaning Process for Its Removal

Monday, October 12, 2015: 15:20
104-A (Phoenix Convention Center)
M. S. Kim, H. R. Ji (Hanyang Univerisy), I. C. Choi, H. T. Kim, S. H. Jang, J. Lee, I. S. Kim, J. H. Kim, H. K. Oh, J. H. Ahn (Hanyang University), and J. G. Park (Hanyang University)
Extreme ultraviolet lithography (EUVL) is the most promising lithography technique for the 22 nm half-pitch and beyond. The EUV patterned masks work in a reflective mode and it has 40 to 50 pairs of MoSi multilayer to reflect EUV radiation. This multilayer is capped by a 2.5 nm Ru thin film to protect the MoSi multilayer. Since EUV mask does not have a pellicle which protects mask surface from the contaminants. Therefore, EUV mask is more vulnerable to particle contamination during lithography processing which is a major yield loss in device fabrication. No study has been reported on the effect of particle size on CD variation if they exist on EUV mask. The critical defect size, which can cause 10 % CD error, has to be removed from the mask surface. When the defect is located between line and space patterns on the mask, the reflectivity will be reduced due to defect absorption. Simulation predicted that 30 nm sized silica particles can cause 10 % CD error on 16 nm line and space pattern. Thus, these contaminant particles have to be removed from EUV mask surface for preventing CD variation. In order to evaluate the 30 nm sized silica particle removal test, we adopted 30 nm standard spherical silica particles. Actually, it is a challenge to evaluate 30 nm particles removal test without inspection tools. So, we used atomic micro scope (AFM) for the evaluation of these particles. The silica particles were intentionally deposited on Ru surface using spinning method. Cleaning test was performed with twin type megasnoic. 30 nm silica particles removal efficiency was drastically decreased as compared with 137 nm silica particles at 1 MHz megasonic cleaning. Because the megasonic cleaning force was reduced to ultra-fine particles due to boundary layer thickness. Therefore, higher megasonic cleaning force is required to remove ultra-fine particles to overcome boundary layer thickness. It is well known that the large cleaning force is induced, not only particle removal efficiency but also pattern damage will be increased. Thus, megasonic cleaning process without causing pattern damage has to be optimized.

In this study, we shall discuss the effect of megasonic frequency on the removal of ultra-fine particles and pattern damage. Also, gas dissolved water and dilute alkali cleaning solution are adopted to high frequency megasonic cleaning process to achieve ultra-fine particles removal without pattern damage effectively.