FEOL/BEOL: Materials and Processes

Tuesday, 31 May 2016: 08:00-12:40
Indigo 206 (Hilton San Diego Bayfront)
Chairs:
Vijay Narayanan and Evgeni Gusev
08:00
(Invited) TmSiO as a CMOS-Compatible High-k Dielectric
E. Dentoni Litta, P. E. Hellström, and M. Östling (KTH Royal Institute of Technology)
09:00
(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation
W. Lerch, T. Schick, N. Sacher, W. Kegel (centrotherm photovoltaics AG), J. Niess (HQ-Dielectrics GmbH), M. Czernohorsky, and S. Riedel (Fraunhofer IPMS-CNT)
09:40
Break
10:00
(Invited) The (R)Evolution of the Junctionless Transistor
R. Duffy (Tyndall National Institute, University College Cork)
11:40
Height Uniformity of Micro-Bumps Electroplated on Thin Cu Seed Layers
L. Yang, J. Slabbekoorn, M. Honore, K. Stiers, H. Struyf (imec), P. M. Vereecken (KU Leuven), and A. Radisic (imec)
12:00
Application of Process Simulation for Comparison of Contactless and Conventional Electrodeposition Methods for 3D Packaging
M. Zhao, K. Jakes, K. Luke, J. Kishore (University of Arizona), R. Gouk, S. Verhaverbeke (Applied Materials, Inc.), F. Shadman, and M. Keswani (University of Arizona)
12:20
Vapor Phase Self-Assembled Monolayers for CMOS BEOL Barrier Layers
T. R. Naik, M. Ravikanth, and V. R. Rao (Indian Institute of Technology Bombay (IIT Bombay))