The purpose of this work is to study in detail the effects of different bombardments on InP, from monoatomic projectiles known to strongly modify crystallinity of surfaces to argon clusters, promising for characterization of sensitive materials thanks to a low energy by atom in the cluster (no ion implantation). While XPS profiling of crystalline materials by ionic bombardment is performed, a core level peak broadening is generally observed. In the case of binary semiconductors, changes in the atomic ratios may also appear. These effects can be interpreted as the appearance of disorder in a crystalline structure and a preferential etching. The objective here is the correlation between XPS and interfacial electrochemistry. Such approach allows to know the overall changes in the properties of the electrode induced by various treatments and therefore highlights the limits of interpretations in XPS profiling study (under vacuum) and the possible reorganizations when delivered to the air. Modifications of the electrode could be followed by its electrochemical modification toward hydrogen evolution leading to different cathodic decomposition of the material. After monoatomic sputtering, indium enrichment and electrochemical modification are observed and related to the level of perturbation. The photocurrent is no longer detectable, showing formation of a film that modifies the semiconductor response. The Mott-Schottky plot strongly flattens over the entire potential gap of InP. Nyquist plots also show an increase in the charge transfer resistance at the open circuit potential. Using cluster of thousands of argon atoms allows better control of the induced modifications. A regime where the characteristics of the semiconductor can be retrieved by anodic dissolution or chemical etching will be particularly investigated.