Semiconductor-solution Interfaces 1

Monday, 29 May 2017: 13:10-15:50
Churchill C2 (Hilton New Orleans Riverside)
Chairs:
Andrew Campion Hillier and Colm O'Dwyer
13:10
1204
(Invited) Concepts of the Solid-Electrolyte Phase Boundary: Experimental Evidence and Resulting Devices
H. J. Lewerenz (California Institute of Technology, Joint Center for Artificial Photosynthesis)
13:50
1205
(Invited) Chemically Modified Semiconductor Photoelectrodes
S. Maldonado (University of Michigan)
14:30
1206
Indium Phosphide Surface Modifications By Electrochemistry and Ionic Sputtering
D. Aureau, M. Frégnaux, A. M. Gonçalves, and A. Etcheberry (Institut Lavoisier de Versailles)
14:50
1207
(Invited) Latest Status of Semiconductor Electrodeposition
D. Lincot (IRDEP, CNRS)
15:30
1208
Watching Electrochemical Topography Change with Fast, High-Resolution Scanning Probe Microscopy
N. D. Kirchhofer, R. Proksch, and I. Revenko (Oxford Instruments Asylum Research)
See more of: G01: Processes at the Semiconductor Solution Interface 7
See more of: Electronic Materials and Processing
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