New Materials and Device Architectures

Tuesday, 30 May 2017: 10:40-12:20
Churchill B2 (Hilton New Orleans Riverside)
Chair:
P. J. Timans
10:40
1266
(Invited) Bringing III-Vs into CMOS: From Materials to Circuits
L. Czornomaz, V. V. Deshpande, E. O'Connor, D. Caimi, M. Sousa, and J. Fompeyrine (IBM Zurich Research Laboratory)
11:20
1267
(Invited) 2D/3D Tunnel-FET: Toward Green Transistors and Sensors
W. Cao, J. Kang, and K. Banerjee (University of California, Santa Barbara)
12:00
1268
The Virtual Diode with Electrostatic Doping
K. Lee (IMEP-LAHC), M. Bawedin (IMEP-LAHC, INP Minatec), M. Parihar, H. J. Park, and S. Cristoloveanu (IMEP-LAHC)
See more of: G02: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7
See more of: Electronic Materials and Processing
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