Devices, Dielectrics and Reliability

Tuesday, 30 May 2017: 14:00-16:25
Norwich (Hilton New Orleans Riverside)
Chairs:
Jifa Hao and Yaw S. Obeng
14:00
1004
(Invited) Understanding the Pre-Failure Thermo-Mechanical Issues in Electromigration of TSV Enabled 3D ICs
C. E. Sunday, D. Veksler, K. P. Cheung, and Y. S. Obeng (National Institute of Standards and Technology (NIST))
14:30
1005
Failure Mechanism of Nano-Resistor Devices
S. Zhang and Y. Kuo (Texas A&M University)
14:50
Break
15:00
1006
(Invited) Hot Carrier Reliability of High Voltage HVMOSFETs in BCD (Bipolar-CMOS-DMOS) Technology
J. Hao (ON Semiconductor)
15:30
1007
(Invited) Gallium Nitride on Silicon
E. L. Piner (Texas State University)
16:00
1008
Reliability of Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates
M. N. U. Bhuyian (New Jersey Institute of Technology), A. Sengupta (Heritage Institute of Technology), Y. Ding, D. Misra (New Jersey Institute of Technology), K. Tapily (TEL Technology Centre, America, LLC), R. D. Clark (TEL Technology Center, America, LLC), S. Consiglio (TEL Technology Center), C. S. Wajda, and G. J. Leusink (TEL Technology Center, America, LLC)
16:20
Concluding Remarks
See more of: D01: Emerging Materials for Post CMOS Devices/Sensing and Applications 8
See more of: Dielectric Science and Materials
<< Previous Session | Next Session >>