Under such a background, the present paper reports our recent progress in advanced low-temperature crystallizations for Si1-xSnx (x: 0–0.4) thin films on various substrates (insulators, Si, Ge, InP, etc.). Composition analyses indicate that approximately 20% of the Sn atoms are substituted into the polycrystalline (or epitaxial) thin films grown on an insulator (or Ge(001)) after annealing at 220 oC for 5 h. By using InP(001) substrates, the Sn content could raise up to about 40%. Comparison of the band gap with the calculated values and new applications, such as Si1-xSnx-source tunnel field effect transistors and thermoelectric generator, will be discussed.
This work was partially supported by Grants-in-Aid for Scientific Research (S) (Grant No. 26220605) and Young Scientists (A) (Grant No. 17H04919) from JSPS in Japan and PRESTO (Grant No. JPMJPR15R2) from JST in Japan.