Growth, Characterization, and Modeling

Wednesday, 4 October 2017: 08:30-12:00
Chesapeake A (Gaylord National Resort and Convention Center)
Chairs:
Erica A. Douglas and Robert P. Lynch
09:00
III-Nitride Epitaxy for Electronic and Optoelectronic Devices
F. S. Shahedipour-Sandvik, I. Mahaboob, J. Marini, K. Hogan, and E. Rocco (SUNY Polytechnic Institute)
10:00
Break
10:20
(Invited) GaN-Based Device Reliability Investigations through Advanced TEM Techniques
P. Specht (University of California, Berkeley), T. J. Anderson, A. D. Koehler (Naval Research Laboratory), O. D. Dubon (University of California, Berkeley), and T. R. Weatherford (Naval Postgradute School)
10:50
(Invited) Atom Probe Tomography of 1D, 2D and 3D Semiconductors
P. Kung, J. L. Waters, S. Garg, and S. M. Kim (University of Alabama)
11:20
Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset
X. Gao, A. Huang (Sandia National Laboratories), and B. Kerr (New Mexico Institute of Mining and Technology)
11:40
Numerical Model of Three-Step Mechanism of Pore Formation in n-InP
I. Clancy (Department of Physics, University of Limerick), N. Quill (Department of Physics, University of Limerick, Bernal Institute, University of Limerick, Ireland), C. O'Dwyer (Department of Chemistry, University College Cork), D. N. Buckley, and R. P. Lynch (Department of Physics, University of Limerick, Bernal Institute, University of Limerick, Ireland)