Interconnection

Monday, 2 October 2017: 14:00-16:00
Chesapeake C (Gaylord National Resort and Convention Center)
Chairs:
Christophe Detavernier and Hiroshi Nakashima
14:00
1119
(Invited) Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer
H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang (Kyushu University)
14:30
1120
(Invited) Ultrathin Epitaxial Silicides for Semiconductor Contacts
F. Geenen (Ghent University), C. Mocuta (Synchrotron SOLEIL), and C. Detavernier (Ghent University)
15:00
1121
Reconsideration of Metal Work Function at Metal/Semiconductor Interface
T. Nishimura, T. Yajima, and A. Toriumi (The University of Tokyo)
15:20
1122
Experimental Study of PVD Cu/CVD Co Bilayer Dissolution for BEOL Cu Interconnect Applications
X. Sun, B. Peethala (IBM Research), M. Hopstaken, C. K. Hu (IBM T.J. Watson Research Center), P. S. Mclaughlin, O. van der Straten, J. Demarest, K. Motoyama, T. Nogami (IBM Research), X. Lin, X. Zhang (Globalfoundries), and J. Kelly (IBM Research)
15:40
1123
Development of Advanced Cobalt CMP Slurry Platform By Electrochemical Screening and Polishing Studies
M. G. Theivanayagam, H. Wang, M. VanHanehem, and R. Auger (Dow Electronic Materials, The Dow Chemical Company)
See more of: G03: Semiconductor Process Integration 10
See more of: Electronic Materials and Processing
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