Atomic Layer Etching

Roozeboom, Fred

Monday, 2 October 2017: 08:30-11:20

Chesapeake L (Gaylord National Resort and Convention Center)

Chair:

Fred Roozeboom

08:30

Welcoming Remarks

08:40

1083

(Invited) Industry Perspectives on Atomic Layer Etching

K. J. Kanarik (Lam Research)

09:20

1084

(Invited) Thermal Cyclic Atomic-Level Etching of Nitride Films: A Novel Way for Atomic-Scale Nanofabrication

K. Shinoda, N. Miyoshi, H. Kobayashi, M. Kurihara (Hitachi, Ltd.), M. Izawa (Hitachi High-Technologies Corp.), K. Ishikawa, and M. Hori (Nagoya University)

10:00

Break

10:20

1085

Etching with Low T_e Plasmas

S. G. Walton (U.S. Naval Research Laboratory), D. R. Boris (U. S. Naval Research Laboratory), S. C. Hernandez (Naval Research Laboratory), S. G. Rosenberg (ASEE Postdoctoral Fellow - residing at NRL), H. Miyazoe, A. V. Jagtiani, S. U. Engelmann (IBM, T.J. Watson Research Center), and E. A. Joseph (IBM Research Division, T.J. Watson Research Center)

10:40

1086

(Invited) Materials Selectivity in Atomic Layer Etching of SiO₂, Si, and Si₃N₄ Using Plasma Process Sequences

G. S. Oehrlein (University of Maryland)

See more of: G02: Atomic Layer Deposition Applications 13
See more of: Electronic Materials and Processing

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