2D and Beyond Materials and Devices

Tuesday, 3 October 2017: 14:00-17:20
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Navakanta Bhat and Andre Stesmans
14:00
834
(Invited) Properties of Metal/High-k Oxide/Graphene Structures
O. Engström (University of Siegen, AMO GmbH), M. C. Lemme (AMO GmbH, RWTH Aachen University), and O. Habibpour (Chalmers University of Technology)
14:30
835
(Invited) Probing Dopants in 2H MoS2 Crystals and 2D Layers by Electron Paramagnetic Resonance: Identification and Quantification
A. Stesmans, S. Iacovo, B. Schoenaers, M. Houssa, and V. V. Afanas'ev (University of Leuven)
15:00
836
(Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors
V. V. Afanas'ev (KU Leuven), D. Chiappe, A. Leonhardt (imec), M. Houssa (University of Leuven), C. Huyghebaert (Imec vzw), I. Radu (imec), and A. Stesmans (University of Leuven)
15:30
Break
15:40
837
(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors
T. Knobloch, G. Rzepa (Institute for Microelectronics, TU Wien), Y. Y. Illarionov (Institute for Microelectronics, TU Wien, Ioffe Physical-Technical Institute), M. Waltl (Institute for Microelectronics, TU Wien), D. Polyushkin, A. Pospischil, M. Furchi, T. Mueller (Institute for Photonics, TU Wien), and T. Grasser (Institute for Microelectronics)
16:10
838
(Invited) Resonant Interlayer Tunneling in 2D Van Der Waals-Materials-Based Channel-Dielectric-Channel Systems and Possible Device and Circuit Applications
L. F. Register II, G. W. Burg, C. M. Corbet, B. Fallahazad, S. Kang, K. Kim, S. Larentis, K. Lee, O. Mohammed, X. Mou, H. C. P. Movva, N. Prasad, D. Reddy, A. Valsaraj, X. Wu (The University of Texas at Austin), S. K. Banerjee (University of Texas, Austin), E. Tutuc (The University of Texas at Austin), N. Sharma, Q. Wang, M. Kim, A. Marshall (The University of Texas at Dallas), J. Xue (Shanghai Technical University), T. Taniguchi, K. Watanabe (National Institute of Materials Science), and L. Colombo (Texas Instruments Incorporated)
16:40
839
(Invited) Investigation of Critical Interfaces in Few-Layer MoS2 Field Effect Transistors with High-k Dielectrics
C. D. Young, P. Bolshakov, P. Zhao, C. Smyth, A. Khosravi (University of Texas at Dallas), P. K. Hurley (Tyndall and Dept. of Chemistry University College Cork), C. L. Hinkle, and R. M. Wallace (University of Texas at Dallas)