O. Engström (University of Siegen, AMO GmbH), M. C. Lemme (AMO GmbH, RWTH Aachen University), and O. Habibpour (Chalmers University of Technology)

A. Stesmans (University of Leuven, Belgium), S. Iacovo, B. Schoenaers, M. Houssa, and V. V. Afanas'ev (University of Leuven)

V. V. Afanas'ev (KU Leuven), D. Chiappe (imec), A. Leonhardt (imec, Belgium), M. Houssa (University of Leuven), C. Huyghebaert (imec vzw), I. Radu (imec, Belgium), and A. Stesmans (University of Leuven, Belgium)

T. Knobloch, G. Rzepa (Institute for Microelectronics, TU Wien), Y. Y. Illarionov (Institute for Microelectronics, TU Wien, Ioffe Physical-Technical Institute), M. Waltl (Institute for Microelectronics, TU Wien), D. Polyushkin, A. Pospischil, M. Furchi (Institute for Photonics, TU Wien), T. Mueller (TU Vienna, Institute for Photonics), and T. Grasser (Institute for Microelectronics)

L. F. Register II, G. W. Burg, C. M. Corbet, B. Fallahazad, S. Kang, K. Kim, S. Larentis, K. Lee, O. Mohammed, X. Mou, H. C. P. Movva, N. Prasad, D. Reddy, A. Valsaraj, X. Wu (The University of Texas at Austin), S. K. Banerjee (University of Texas, Austin), E. Tutuc (The University of Texas at Austin), N. Sharma, Q. Wang, M. Kim, A. Marshall (The University of Texas at Dallas), J. Xue (Shanghai Technical University), T. Taniguchi, K. Watanabe (National Institute of Materials Science), and L. Colombo (Texas Instruments Incorporated)

C. D. Young, P. Bolshakov, P. Zhao, C. Smyth, A. Khosravi (University of Texas at Dallas), P. K. Hurley (Tyndall and Dept. of Chemistry University College Cork), C. L. Hinkle, and R. M. Wallace (University of Texas at Dallas)