Wet Etching and Contamination Removal

Tuesday, 3 October 2017: 15:40-17:20
Chesapeake I (Gaylord National Resort and Convention Center)
Chairs:
Paul W. Mertens and Anthony J. Muscat
15:40
1078
Nickel Contamination from Caustic Etching of Silicon Wafers
D. Sinha (Self)
16:00
1079
Study of Copper Surface Preparation by Sequential Atomic Layer Wet Etching and Laser Annealing Treatments
A. Iwasaki, Y. Akanishi (SCREEN Semiconductor Solutions Co., Ltd.), F. Mazzamuto (SCREEN-LASSE, Gennevilliers, France), E. Kesters, Q. T. Le, and F. Holsteyns (imec)
16:20
1080
Reduced Anisotropy in Tetramethylammonium Hydroxide Based Silicon Etchants
G. Westwood and C. P. S. Hsu (Avantor)
16:40
1081
Modification of DHF for Removal of Metals from Silicon Wafer
D. H. Lee, H. J. Song (Hanyang university), S. H. Jang, H. T. Kim (Hanyang University), J. H. Yi, E. S. Choi (LG Siltron), and J. G. Park (Hanyang University)
 
1082
Electrolyzed Water for Selective Etching of Metals (Cancelled)
See more of: G01: 15th International Symposium on Semiconductor Cleaning Science and Technology (SCST 15)
See more of: Electronic Materials and Processing
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