V. Bouchiat (CNRS, Grenoble-Alpes Université)

E. J. O'Sullivan (IBM Research Division, T.J. Watson Research Center), A. J. Annunziata (IBM Research Div., T.J. Watson Res. Center), J. Gonsalves (IBM Research Division, T.J. Watson Research Center), G. Hu (IBM Research Division, T.J. Watson Res. Center), E. A. Joseph (IBM Research Division, T.J. Watson Research Center), R. Kothandaraman, G. Lauer (IBM Research Division, T. J. Watson Research Center), N. Marchack (IBM Research Division, T.J. Watson Research Center), J. J. Nowak (IBM Research Division, T. J. Watson Research Center), R. P. Robertazzi (IBM T.J. Watson Research Center), J. Z. Sun (IBM Research Division, T. J. Watson Research Center), T. Suwannasiri (IBM Research Division, T. J. Watson Research Center,), P. L. Trouilloud (IBM Research Division, T.J. Watson Research Center), Y. Zhu, and D. C. Worledge (IBM Research Division, T. J. Watson Research Center)

K. F. Yuan, J. Q. Zhou, M. D. Hu (SMIC), Q. Y. He (SMIC, China), and H. Y. Zhang (Semiconductor Manufacturing International Corporation)

P. P. Liu (Semiconductor Manufacturing International Corporation), C. L. Zhang, and H. Y. Zhang (Semiconductor Manufacturing International Corp.)