Characterization and Reliability

Wednesday, 4 October 2017: 08:30-12:40
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Yaw S. Obeng and Gennadi Bersuker
08:30
841
(Invited) Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis
S. Miyazaki, A. Ohta, and N. Fujimura (Nagoya University)
09:30
Break
09:50
843
(Invited) Characterization of Advanced Devices: Identifying Performance & Degradation Drivers
G. Bersuker, D. G. Pierce, and M. S. Mason (The Aerospace Corporation)
10:20
844
(Invited) Dipoles in Gate-Stack/FDSOI Structure
G. Reimbold, C. Leroux (CEA-LETI), C. Suarez Segovia (STMicroelectronics), B. Mohamad (CEA-LETI, IMEP-LAHC), P. Kumar (STMicroelectronics, CEA-LETI), X. Garros (CEA-LETI), F. Domengie (STMicroelectronics), P. Blaise (CEA-LETI), and G. Ghibaudo (IMEP-LAHC)
11:20
846
Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications
C. E. Sunday (National Institute of Standards and Technology (NIST)), K. R. Montgomery, P. K. Amoah (NIST), E. I. Iwuoha (University of Western Cape), and Y. S. Obeng (National Institute of Standards and Technology (NIST))
11:40
847
Determination of Trap Density in Hafnium Oxide Films Produced by Different Atomic Layer Deposition Techniques
D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and M. S. Lebedev (Nikolaev Institute of Inorganic Chemistry SB RAS)
12:00
848
Effect of SiO2 Coating Layer on CCTO Particles on Properties of CCTO/PVDF Composites
H. Talebinezhad, Y. Tong (Auburn University), X. Lu (Xi'an University of Technology), L. Li, and Z. Cheng (Auburn University)
12:20
849
The Charge Trap Density Evolution in Wake-Up and Fatigue Modes of FRAM
D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), O. M. Orlov (JSC Molecular Electronics Research Institute), V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and G. J. Krasnikov (JSC Molecular Electronics Research Institute)