S. Miyazaki (Nagoya University), A. Ohta (Graduate School of Engineering, Nagoya University), and N. Fujimura (Nagoya University)

P. C. McIntyre (Stanford University)

G. Bersuker, D. G. Pierce, and M. S. Mason (The Aerospace Corporation)

G. Reimbold, C. Leroux (CEA-LETI), C. Suarez Segovia (STMicroelectronics), B. Mohamad (CEA-LETI, IMEP-LAHC), P. Kumar (STMicroelectronics, CEA-LETI), X. Garros (CEA-LETI), F. Domengie (STMicroelectronics), P. Blaise (CEA-LETI), and G. Ghibaudo (IMEP-LAHC, INP MINATEC)

S. Migita (AIST)

C. E. Sunday (National Institute of Standards and Technology (NIST)), K. R. Montgomery, P. K. Amoah (NIST), E. I. Iwuoha (University of Western Cape), and Y. S. Obeng (National Institute of Standards and Technology (NIST))

D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and M. S. Lebedev (Nikolaev Institute of Inorganic Chemistry SB RAS)

H. Talebinezhad, Y. Tong (Auburn University), X. Lu (Xi'an University of Technology), L. Li, and Z. Cheng (Auburn University)

D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), O. M. Orlov (JSC Molecular Electronics Research Institute), V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and G. J. Krasnikov (JSC Molecular Electronics Research Institute)