General GaN & SiC Technologies

Monday, 2 October 2017: 10:00-12:20
Chesapeake B (Gaylord National Resort and Convention Center)
Michael Dudley and N. Ohtani
Welcoming Remarks
(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga2O3 Must Master to Compete with SiC and GaN HPE Devices
K. A. Jones, R. P. Tompkins, M. B. Graziano, and M. A. Derenge (Army Research Lab)
(Invited) 650 Volt GaN Commercialization Reaches Automotive Standards
P. Parikh, K. Smith, R. Barr (Transphorm Inc.), K. Shono (Transphorm Japan), J. McKay, L. Shen, R. Lal, S. Chowdhury, S. Yea, R. P. Smith (Transphorm Inc.), T. Hosoda (Transphorm Japan), J. Gritters, L. McCarthy, R. Birkhahn (Transphorm Inc.), K. Imanishi (Transphorm Japan), B. Swenson, M. Moore (Transphorm Inc.), Y. Kotani, T. Ogino (Transphorm Japan), N. Bushnell, J. Guerrero, H. Clement (Transphorm Inc.), Y. Asai (Transphorm Japan), and Y. Wu (Transphorm Inc.)
(Invited) Material Considerations for the Development of III-Nitride Power Devices
B. Sarkar (North Carolina State University), P. Reddy (Adroit Materials Inc., North Carolina State University), F. Kaess, B. Haidet (North Carolina State University), J. Tweedie, S. Mita, R. Kirste (Adroit Materials Inc.), E. Kohn, R. Collazo, and Z. Sitar (North Carolina State University)
Recent Progress in SiC and GaN Power Devices
K. Sheng, S. Yang, Q. Guo, and H. Xu (Zhejiang University)