Optoelectronics 3

Monday, 1 October 2018: 08:00-09:40
Universal 13 (Expo Center)
Chair:
Gianlorenzo Masini
08:00
1021
(Invited) Development of Si-Based Sigesn Technique Towards Short-Wave and Mid-Infrared Applications
S. Q. Yu (University of Arkansas), W. Du (Wilkes University), S. A. Ghetmiri (University of Arkansas), A. Mosleh (University of Arkansas at Pine Bluff), J. Margetis, J. Tolle (ASM America), J. Liu (Dartmouth College), M. Mortazavi (University of Arkansas at Pine Bluf), G. Sun, R. Soref (University of Massachusetts Boston), and B. Li (Arktonics, LLC)
08:30
1022
(Invited) Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform
T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo (NTT Corporation)
09:00
1023
IR-Photodetector Fabrication on Suspended Gesn Thin Layers
A. Abedin, K. Garidis, P. E. Hellström (KTH Royal Institute of Technology), and M. Ostling (KTH)
09:20
1024
Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors
S. Assali, J. Nicolas (École Polytechnique de Montréal), S. Mukherjee (Ecole Polytechnique de Montreal), É. Bouthillier, A. Attiaoui, and O. Moutanabbir (École Polytechnique de Montréal)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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