Bonding of Wide Bandgap Semiconductor

Monday, 1 October 2018: 08:00-09:40
Universal 14 (Expo Center)
Chairs:
Helmut Baumgart and Frank NIklaus
08:00
940
(Invited) Room Temperature Wafer Bonding of Wide Bandgap Semiconductors
F. Mu (School of Engineering, The University of Tokyo), Y. Wang (Kunshan Branch, Institute of Microelectronics of CAS, University of Chinese Academy of Sciences), and T. Suga (School of Engineering, Univ. Tokyo)
08:40
941
Direct Wafer Bonding of GaN for Power Devices Applications
V. Dragoi (EV Group), N. Razek (EV Group, G-Ray Medical and Industries), E. Guiot, R. Caulmilone (Soitec), M. Liao, Y. S. Wang (University of California, Los Angeles), M. S. Goorsky (University of California Los Angeles), L. Yates, and S. Graham (Georgia Institute of Technology)
09:00
942
GaN LED on Quartz Substrate through Wafer Bonding and Layer Transfer Processes
K. H. Lee (SMART Low Energy Electronic Systems), Y. Wang (Singapore-MIT Alliance for Research & Technology), L. Zhang (SMART Low Energy Electronic Systems), S. J. Chua (SMART Low Energy Electronic Systems, National University of Singapore), E. A. Fitzgerald (SMART Low Energy Electronic Systems, Massachusetts Institute of Technology), and C. S. Tan (SMART Low Energy Electronic Systems, Nanyang Technological University)