860
Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures
Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures
Tuesday, May 14, 2013: 08:40
Norfolk, Mezzanine Level (Sheraton)
Shahab Siddiqui
,
IBM Corporation, Somers, NY
Murshed M Chowdhury
,
IBM Corporation
Maryjane Brodsky
,
IBM Corporation
Nilufa Rahim
,
IBM Corporation
Min Dai
,
IBM Corporation
Siddarth Krishnan
,
IBM Corporation
Steve Fugardi
,
IBM Corporation
Ernest Wu
,
IBM Corporation
Anthony Chou
,
IBM Corporation
Shreesh Narasimha
,
IBM Corporation
Jinghong Li
,
IBM Corporation
Kevin Mcstay
,
IBM Corporation
Barry Linder
,
IBM Corporation
Edward Maciejewski
,
IBM Corporation
Ryan Rettmann
,
IBM Corporation
Steven Mittl
,
IBM Corporation
Unoh Kwon
,
IBM Corporation
Vijay Narayanan
,
IBM Corporation
William Henson
,
IBM Corporation
Dominic Schepis
,
IBM Corporation
Michael Chudzik
,
IBM Corporation
Abstract:
- E5-0860 (187.0KB) - Abstract Text