Non-Planar Devices: FINFETS/Nanowires
Tuesday, May 14, 2013: 08:00-10:20
Norfolk, Mezzanine Level (Sheraton)
Chairs:
P. J. Timans
and
E. P. Gusev
08:00
(Invited) Strain-Enhanced Performance of Si-Nanowire FETs
Mikaël Cassé, CEA LETI;
Sylvain Barraud, CEA LETI;
Rémi Coquand, CEA-Leti;
Masahiro Koyama, CEA LETI;
David Cooper, CEA LETI;
C. Vizioz, CEA-Leti;
C. Comboroure, CEA-Leti;
P. Perreau, CEA-Leti;
V. Maffini-Alvaro, CEA-Leti;
C. Tabone, CEA-Leti;
L. Tosti, CEA-Leti;
S. Barnola, CEA-Leti;
Vincent Delaye, CEA-Leti;
Francois Aussenac, CEA France;
Gérard Ghibaudo, IMEP-LAHC;
Hiroshi Iwai, Tokyo Institute of Technology;
Gilles Reimbold, CEA LETI
08:40
Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures
Shahab Siddiqui, IBM Corporation;
Murshed M Chowdhury, IBM Corporation;
Maryjane Brodsky, IBM Corporation;
Nilufa Rahim, IBM Corporation;
Min Dai, IBM Corporation;
Siddarth Krishnan, IBM Corporation;
Steve Fugardi, IBM Corporation;
Ernest Wu, IBM Corporation;
Anthony Chou, IBM Corporation;
Shreesh Narasimha, IBM Corporation;
Jinghong Li, IBM Corporation;
Kevin Mcstay, IBM Corporation;
Barry Linder, IBM Corporation;
Edward Maciejewski, IBM Corporation;
Ryan Rettmann, IBM Corporation;
Steven Mittl, IBM Corporation;
Unoh Kwon, IBM Corporation;
Vijay Narayanan, IBM Corporation;
William Henson, IBM Corporation;
Dominic Schepis, IBM Corporation;
Michael Chudzik, IBM Corporation
